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EUP3595QIR1 - 512K x 32, 3.3V, MCM, Async CMOS 5.0V, High Speed Static RAM 512K x 32, 5V, MCM, Rad Tol, Async Parallel White-LED Driver

EUP3595QIR1_4129149.PDF Datasheet


Part No.	EUP3595QIR1 EUP3595JIR1 EUP3595
Description	512K x 32, 3.3V, MCM, Async CMOS 5.0V, High Speed Static RAM 512K x 32, 5V, MCM, Rad Tol, Async Parallel White-LED Driver
File Size	396.93K / 10 Page
Maker	德信科技股份有限公司 Eutech Microelectronics Inc
Homepage	http://www.eutechmicro.com
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Full text search : 512K x 32, 3.3V, MCM, Async CMOS 5.0V, High Speed Static RAM 512K x 32, 5V, MCM, Rad Tol, Async Parallel White-LED Driver

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5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59	512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).	Aeroflex Circuit Technology
CY7C1049-17VC CY7C1049 CY7C1049-20VM CY7C1049-15VC	Plastic Connector Backshell; Enclosure Material:Polyester; Enclosure Color:Black; Features:For: 101XX-300VE Mini D Ribbon Solder Plugs; No. of Positions:14 RoHS Compliant: Yes 512K X 8 STANDARD SRAM, 20 ns, PDSO36 BACKSHELL, MDR, 20WAY, METAL; For use with:Mini D Ribbon 101XX-6000 EC Plug Connectors; Material:Aluminum; Colour:Nickel; Connector type:Backshell; Ways, No. of:20 RoHS Compliant: Yes 512K X 8 STANDARD SRAM, 20 ns, PDSO36 Plastic Connector Backshell; Enclosure Material:Plastic; Approval Bodies:UL, CSA; Enclosure Color:Beige; Leaded Process Compatible:No; No. of Positions:26; Peak Reflow Compatible (260 C):No RoHS Compliant: No 512K x 8 Static RAM Memory : Async SRAMs	Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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